SMBJ33A vs SMBJ33A feature comparison

SMBJ33A General Instrument Corp

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SMBJ33A International Semiconductor Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GENERAL INSTRUMENT CORP INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 42.2 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Clamping Voltage-Max 53.3 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 38.7 V
Power Dissipation-Max 1 W
Rep Pk Reverse Voltage-Max 33 V

Compare SMBJ33A with alternatives

Compare SMBJ33A with alternatives