SMBJ3V3HE3_B/I vs SMBJ3.3A feature comparison

SMBJ3V3HE3_B/I Vishay Intertechnologies

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SMBJ3.3A Shenzhen Socay Electronics Corp Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SHENZHEN SOCAY ELECTRONICS CORP LTD
Package Description SMB, 2 PIN SMB, 2 PIN
Reach Compliance Code unknown unknown
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min 4.1 V 5.2 V
Clamping Voltage-Max 7.3 V 8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101 IEC-61000-4-2, 4-4; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 3.3 V 3.3 V
Reverse Current-Max 200 µA 600 µA
Reverse Test Voltage 3.3 V 3.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 3
Breakdown Voltage-Max 6.5 V
Breakdown Voltage-Nom 5.85 V
Forward Voltage-Max (VF) 3.5 V

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