SMBJ5.0 vs SMBJ5.0-T3 feature comparison

SMBJ5.0 International Semiconductor Inc

Buy Now Datasheet

SMBJ5.0-T3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 7.3 V 7.82 V
Breakdown Voltage-Min 6.4 V 6.4 V
Breakdown Voltage-Nom 6.85 V
Clamping Voltage-Max 9.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 5 V 5 V
Reverse Current-Max 800 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Rohs Code No
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

Compare SMBJ5.0 with alternatives

Compare SMBJ5.0-T3 with alternatives