SMBJ5.0HR4G vs SMBJ5.0A-E3/5B feature comparison

SMBJ5.0HR4G Taiwan Semiconductor

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SMBJ5.0A-E3/5B Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Package Description R-PDSO-C2 SMB, 2 PIN
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max 7.3 V 7.07 V
Breakdown Voltage-Min 6.4 V 6.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5 V 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 2
Factory Lead Time 9 Weeks, 3 Days
Samacsys Manufacturer Vishay
Breakdown Voltage-Nom 6.74 V
Clamping Voltage-Max 9.2 V
Forward Voltage-Max (VF) 3.5 V
Qualification Status Not Qualified
Reverse Current-Max 800 µA
Reverse Test Voltage 5 V

Compare SMBJ5.0HR4G with alternatives

Compare SMBJ5.0A-E3/5B with alternatives