SMBJ6.0 vs SMBJ6.0AR5G feature comparison

SMBJ6.0 LRC Leshan Radio Co Ltd

Buy Now Datasheet

SMBJ6.0AR5G Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer LESHAN RADIO CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 SMB, 2 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.37 V 7.37 V
Breakdown Voltage-Min 6.67 V 6.67 V
Breakdown Voltage-Nom 7.2 V
Clamping Voltage-Max 10.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 6 V 6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 47 1
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ6.0 with alternatives

Compare SMBJ6.0AR5G with alternatives