SMBJ60 vs SMBJ60AR4 feature comparison

SMBJ60 Bytesonic Corporation

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SMBJ60AR4 Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer BYTESONIC ELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 81.5 V 73.7 V
Breakdown Voltage-Min 66.7 V 66.7 V
Breakdown Voltage-Nom 74.1 V 70.2 V
Clamping Voltage-Max 107 V 96.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 60 V 60 V
Reverse Current-Max 5 µA
Reverse Test Voltage 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 46 1
Rohs Code Yes
Package Description SMB, 2 PIN
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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