SMBJ60C-M3/5B vs SMBJ60CAR5G feature comparison

SMBJ60C-M3/5B Vishay Semiconductors

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SMBJ60CAR5G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY SEMICONDUCTORS TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AA
Package Description R-PDSO-J2 SMB, 2 PIN
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 81.5 V 73.7 V
Breakdown Voltage-Min 66.7 V 66.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 60 V 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 70.2 V
Clamping Voltage-Max 96.8 V
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ60C-M3/5B with alternatives

Compare SMBJ60CAR5G with alternatives