SMBJ70 vs SMBJ70 feature comparison

SMBJ70 Bytesonic Corporation

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SMBJ70 International Semiconductor Inc

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer BYTESONIC ELECTRONICS CO LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 95.1 V 95.1 V
Breakdown Voltage-Min 77.8 V 77.8 V
Breakdown Voltage-Nom 86.45 V 86.5 V
Clamping Voltage-Max 125 V 125 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 70 V 70 V
Reverse Current-Max 5 µA 5 µA
Reverse Test Voltage 70 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 8 8
Package Description R-PDSO-C2
Power Dissipation-Max 1 W
Qualification Status Not Qualified

Compare SMBJ70 with alternatives

Compare SMBJ70 with alternatives