SMBJ70 vs SMBJ70 feature comparison

SMBJ70 Kuwait Semiconductor Co Ltd

Buy Now Datasheet

SMBJ70 International Semiconductor Inc

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FORWARD INTERNATIONAL ELECTRONICS LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 86.45 V 86.5 V
Clamping Voltage-Max 125 V 125 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 70 V 70 V
Surface Mount YES YES
Base Number Matches 8 8
Package Description R-PDSO-C2
Breakdown Voltage-Max 95.1 V
Breakdown Voltage-Min 77.8 V
Configuration SINGLE
Diode Element Material SILICON
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

Compare SMBJ70 with alternatives

Compare SMBJ70 with alternatives