SMBJ70 vs SMBJ70A-GT3 feature comparison

SMBJ70 Kuwait Semiconductor Co Ltd

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SMBJ70A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FORWARD INTERNATIONAL ELECTRONICS LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 86.45 V
Clamping Voltage-Max 125 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 70 V 70 V
Surface Mount YES YES
Base Number Matches 8 2
Rohs Code Yes
Package Description R-PDSO-C2
Breakdown Voltage-Max 89.5 V
Breakdown Voltage-Min 77.8 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

Compare SMBJ70 with alternatives

Compare SMBJ70A-GT3 with alternatives