SMBJ70 vs SMBJ70 feature comparison

SMBJ70 Microsemi Corporation

Buy Now Datasheet

SMBJ70 International Semiconductor Inc

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP INTERNATIONAL SEMICONDUCTOR INC
Part Package Code DO-214AA
Package Description R-PDSO-J2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 95.1 V 95.1 V
Breakdown Voltage-Min 77.8 V 77.8 V
Breakdown Voltage-Nom 86.5 V 86.5 V
Clamping Voltage-Max 125 V 125 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1 W
Rep Pk Reverse Voltage-Max 70 V 70 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 368 8
Qualification Status Not Qualified
Reverse Current-Max 5 µA

Compare SMBJ70 with alternatives

Compare SMBJ70 with alternatives