SMBJ70 vs SMBJ70A-GT3 feature comparison

SMBJ70 Secos Corporation

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SMBJ70A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SECOS CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 92.02 V 89.5 V
Breakdown Voltage-Min 75.29 V 77.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 70 V 70 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 16 2
Rohs Code Yes
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED

Compare SMBJ70 with alternatives

Compare SMBJ70A-GT3 with alternatives