SMBJ70A vs SMBJ70AHM3/I feature comparison

SMBJ70A Galaxy Microelectronics

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SMBJ70AHM3/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY INTERTECHNOLOGY INC
Part Package Code SMB
Package Description SMB, 2 PIN SMB, 2 PIN
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 86 V 86 V
Breakdown Voltage-Min 77.8 V 77.8 V
Breakdown Voltage-Nom 81.9 V 81.9 V
Clamping Voltage-Max 113 V 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 70 V 70 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Reverse Current-Max 1 µA
Reverse Test Voltage 70 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMBJ70AHM3/I with alternatives