SMBJ9.0CA vs MXSMBJ9.0CAE3 feature comparison

SMBJ9.0CA JGD Semiconductors Co Ltd

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MXSMBJ9.0CAE3 Microchip Technology Inc

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer JGD SEMICONDUCTORS CO LTD MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Nom 10.55 V
Clamping Voltage-Max 15.4 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 9 V 9 V
Surface Mount YES YES
Base Number Matches 56 2
Rohs Code Yes
Package Description SMBJ, 2 PIN
Breakdown Voltage-Max 11.1 V
Breakdown Voltage-Min 10 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1.38 W
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJ9.0CA with alternatives

Compare MXSMBJ9.0CAE3 with alternatives