SMBJP6KE12ATR vs P6SMB12A-E3/5B feature comparison

SMBJP6KE12ATR Microsemi Corporation

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P6SMB12A-E3/5B Vishay Semiconductors

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Part Package Code DO-214AA DO-214AA
Package Description PLASTIC, SMBJ, 2 PIN R-PDSO-C2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 12.6 V 12.6 V
Breakdown Voltage-Min 11.4 V 11.4 V
Breakdown Voltage-Nom 12 V 12 V
Clamping Voltage-Max 16.7 V 16.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10.2 V 10.2 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Samacsys Manufacturer Vishay
Forward Voltage-Max (VF) 3.5 V
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 5 µA
Reverse Test Voltage 10.2 V
Time@Peak Reflow Temperature-Max (s) 30

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Compare P6SMB12A-E3/5B with alternatives