SMBJP6KE13AE3TR vs P6FMBJ12A feature comparison

SMBJP6KE13AE3TR Microsemi Corporation

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P6FMBJ12A Rectron Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP RECTRON LTD
Part Package Code DO-214AA DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 LOW ZENER IMPEDANCE
Breakdown Voltage-Max 13.7 V 12.6 V
Breakdown Voltage-Min 12.4 V 11.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 5 W
Rep Pk Reverse Voltage-Max 11.1 V 10.2 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 5 5
Pbfree Code Yes
Clamping Voltage-Max 16.7 V
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJP6KE13AE3TR with alternatives

Compare P6FMBJ12A with alternatives