SMBJP6KE56CAE3TR
vs
P6SMB56CA
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
| Ihs Manufacturer |
MICROSEMI CORP
|
SILICON STANDARD CORP
|
| Part Package Code |
DO-214AA
|
|
| Package Description |
R-PDSO-C2
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
TR, 7 INCH: 750
|
|
| Breakdown Voltage-Max |
58.8 V
|
|
| Breakdown Voltage-Min |
53.2 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
| JEDEC-95 Code |
DO-214AA
|
|
| JESD-30 Code |
R-PDSO-C2
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity |
BIDIRECTIONAL
|
|
| Power Dissipation-Max |
1.38 W
|
|
| Rep Pk Reverse Voltage-Max |
47.8 V
|
|
| Surface Mount |
YES
|
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
31
|
| JESD-609 Code |
|
e3
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
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