SMCJ10 vs MXLSMCJLCE10AE3TR feature comparison

SMCJ10 Diodes Incorporated

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MXLSMCJLCE10AE3TR Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer DIODES INC MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 14.1 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 12.4 V 11.7 V
Clamping Voltage-Max 18.8 V 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 33 1
Rohs Code Yes
Part Package Code DO-214AB
Pin Count 2
Additional Feature TR, 7 INCH: 750
JEDEC-95 Code DO-214AB
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 5 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SMCJ10 with alternatives

Compare MXLSMCJLCE10AE3TR with alternatives