SMCJ10CAM6 vs SMCJ10CAE3TR feature comparison

SMCJ10CAM6 Taiwan Semiconductor

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SMCJ10CAE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-J2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 11.7 V 11.7 V
Clamping Voltage-Max 17 V 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 1.56 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 15
Pbfree Code Yes
Part Package Code DO-214AB
Pin Count 2

Compare SMCJ10CAM6 with alternatives

Compare SMCJ10CAE3TR with alternatives