SMCJ18A vs SMCJ18A feature comparison

SMCJ18A General Instrument Corp

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SMCJ18A Taiwan Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer GENERAL INSTRUMENT CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 23.3 V 22.1 V
Breakdown Voltage-Min 20 V 20 V
Clamping Voltage-Max 29.2 V 29.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-J2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 18 V 18 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 24
Rohs Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Nom 21.1 V
JEDEC-95 Code DO-214AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 5 W
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMCJ18A with alternatives

Compare SMCJ18A with alternatives