SMCJ18A vs SMCJ18A feature comparison

SMCJ18A Microchip Technology Inc

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SMCJ18A International Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 22.1 V 22.1 V
Breakdown Voltage-Min 20 V 20 V
Breakdown Voltage-Nom 21.05 V 21.1 V
Clamping Voltage-Max 29.2 V 29.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6 W 3 W
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-STD-750
Rep Pk Reverse Voltage-Max 18 V 18 V
Reverse Current-Max 1 µA 5 µA
Reverse Test Voltage 18 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 10 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Qualification Status Not Qualified