SMCJ33C-T3 vs SMCJ36CAHE3/9AT feature comparison

SMCJ33C-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMCJ36CAHE3/9AT Vishay Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 46.5 V 48.9 V
Breakdown Voltage-Min 36.7 V 40 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 33 V 36 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code DO-214AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 42.1 V
Clamping Voltage-Max 58.1 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 6.5 W
Reference Standard AEC-Q101; UL RECOGNIZED
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMCJ33C-T3 with alternatives

Compare SMCJ36CAHE3/9AT with alternatives