SMCJ33CAHM6 vs 1.5KE33A-GT3 feature comparison

SMCJ33CAHM6 Taiwan Semiconductor

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1.5KE33A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description SMC, 2 PIN O-PALF-W2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 40.6 V 34.7 V
Breakdown Voltage-Min 36.7 V 31.4 V
Breakdown Voltage-Nom 38.65 V
Clamping Voltage-Max 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-201AE
JESD-30 Code R-PDSO-C2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard AEC-Q101 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 33 V 28.2 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Case Connection ISOLATED
Qualification Status Not Qualified

Compare SMCJ33CAHM6 with alternatives

Compare 1.5KE33A-GT3 with alternatives