SMCJ5.0A vs SMCJ5.0AHE3/9AT feature comparison

SMCJ5.0A Galaxy Microelectronics

Buy Now Datasheet

SMCJ5.0AHE3/9AT Vishay Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SEMICONDUCTORS
Part Package Code SMC DO-214AB
Package Description SMC, 2 PIN R-PDSO-C2
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 7.07 V 7.07 V
Breakdown Voltage-Min 6.4 V 6.4 V
Breakdown Voltage-Nom 6.7 V 6.74 V
Clamping Voltage-Max 9.2 V 9.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5 V 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Pbfree Code Yes
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 6.5 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare SMCJ5.0A with alternatives

Compare SMCJ5.0AHE3/9AT with alternatives