SMCJ7.5A-QH vs SMCJ7.5A-ATR feature comparison

SMCJ7.5A-QH Bourns Inc

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SMCJ7.5A-ATR Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer BOURNS INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant compliant
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Additional Feature PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 9.21 V 9.21 V
Breakdown Voltage-Min 8.33 V 8.33 V
Breakdown Voltage-Nom 8.77 V 8.77 V
Clamping Voltage-Max 16.8 V 12.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 7.5 V 7.5 V
Reverse Current-Max 100 µA 100 µA
Reverse Test Voltage 7.5 V 7.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2018-08-30

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