SMCJ8.5A-QH vs SMCJ8.5HR7 feature comparison

SMCJ8.5A-QH Bourns Inc

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SMCJ8.5HR7 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer BOURNS INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant not_compliant
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Additional Feature PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 10.4 V 11.5 V
Breakdown Voltage-Min 9.44 V 9.44 V
Breakdown Voltage-Nom 9.92 V
Clamping Voltage-Max 18.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard AEC-Q101; UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 8.5 V 8.5 V
Reverse Current-Max 20 µA
Reverse Test Voltage 8.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 4
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Power Dissipation-Max 5 W

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