SMDJ12CAV7G vs 3.0SMCJ12CA-GT3 feature comparison

SMDJ12CAV7G Taiwan Semiconductor

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3.0SMCJ12CA-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2020-04-27
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 14.7 V 15.3 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14 V
Clamping Voltage-Max 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 1 µA
Reverse Test Voltage 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-C2
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED

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Compare 3.0SMCJ12CA-GT3 with alternatives