SMDJ45A/TR7 vs SMDJ45AHR7G feature comparison

SMDJ45A/TR7 YAGEO Corporation

Buy Now Datasheet

SMDJ45AHR7G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer YAGEO CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 18 Weeks
Date Of Intro 2019-04-29
Breakdown Voltage-Max 55.3 V 55.3 V
Breakdown Voltage-Min 50 V 50 V
Breakdown Voltage-Nom 52.65 V 52.65 V
Clamping Voltage-Max 72.7 V 72.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.5 W
Rep Pk Reverse Voltage-Max 45 V 45 V
Reverse Current-Max 2 µA
Reverse Test Voltage 45 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Base Number Matches 2 2
Package Description SMC, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
Reference Standard AEC-Q101

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Compare SMDJ45AHR7G with alternatives