SMF10A_R1_00001 vs SMF10 feature comparison

SMF10A_R1_00001 PanJit Semiconductor

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SMF10 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PANJIT INTERNATIONAL INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer PANJIT
Breakdown Voltage-Max 12.3 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 200 W 200 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard IEC-61000-4-2
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 10
Package Description R-PDSO-F2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 12.35 V
Clamping Voltage-Max 18.8 V
Forward Voltage-Max (VF) 1.25 V
Reverse Current-Max 2.5 µA
Reverse Test Voltage 10 V

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