SMF26A vs SMF26A feature comparison

SMF26A Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

SMF26A Thinking Electronic Industrial Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD THINKING ELECTRONIC INDUSTRIAL CO LTD
Package Description R-PDSO-F2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.9 V 31.9 V
Breakdown Voltage-Min 28.9 V 28.9 V
Breakdown Voltage-Nom 30.4 V 30.4 V
Clamping Voltage-Max 42.1 V 42.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 200 W 200 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 26 V 26 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Power Dissipation-Max 0.4 W
Reference Standard MIL-STD-750

Compare SMF26A with alternatives

Compare SMF26A with alternatives