SMF60A_R1_00001 vs SMF60ATR feature comparison

SMF60A_R1_00001 PanJit Semiconductor

Buy Now Datasheet

SMF60ATR Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PANJIT INTERNATIONAL INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 73.7 V 73.7 V
Breakdown Voltage-Min 66.7 V 66.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 200 W 200 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard IEC-61000-4-2
Rep Pk Reverse Voltage-Max 60 V 60 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Package Description R-PDSO-F2
Date Of Intro 2018-08-31
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 70.2 V
Clamping Voltage-Max 96.8 V
Forward Voltage-Max (VF) 1.25 V
Reverse Current-Max 1 µA
Reverse Test Voltage 60 V

Compare SMF60A_R1_00001 with alternatives

Compare SMF60ATR with alternatives