SQ1717C
vs
SQ1717C
feature comparison
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
MSI ELECTRONICS INC
|
| Package Description |
|
O-LALF-W2
|
| Reach Compliance Code |
|
unknown
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
PREDICTABLE TRACKING, VERY HIGH Q
|
| Breakdown Voltage-Min |
|
30 V
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| Diode Cap Tolerance |
|
2%
|
| Diode Capacitance Ratio-Min |
|
2.4
|
| Diode Capacitance-Nom |
|
3.9 pF
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
|
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
|
O-LALF-W2
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Power Dissipation-Max |
|
0.4 W
|
| Qualification Status |
|
Not Qualified
|
| Quality Factor-Min |
|
1100
|
| Rep Pk Reverse Voltage-Max |
|
30 V
|
| Reverse Current-Max |
|
2e-8 µA
|
| Reverse Test Voltage |
|
25 V
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Variable Capacitance Diode Classification |
|
ABRUPT
|
| Base Number Matches |
|
3
|
|
|
|