STP3NB80
vs
STP80NF10
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Part Package Code |
TO-220AB
|
TO-220AB
|
| Package Description |
To-220, 3 Pin
|
To-220, 3 Pin
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
Not Compliant
|
Not Compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
176 Mj
|
350 Mj
|
| Configuration |
Single With Built-In Diode
|
Single With Built-In Diode
|
| DS Breakdown Voltage-Min |
800 V
|
100 V
|
| Drain Current-Max (ID) |
2.6 A
|
80 A
|
| Drain-source On Resistance-Max |
6.5 Ω
|
0.015 Ω
|
| FET Technology |
Metal-Oxide Semiconductor
|
Metal-Oxide Semiconductor
|
| JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
Enhancement Mode
|
Enhancement Mode
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
Plastic/Epoxy
|
Plastic/Epoxy
|
| Package Shape |
Rectangular
|
Rectangular
|
| Package Style |
Flange Mount
|
Flange Mount
|
| Polarity/Channel Type |
N-Channel
|
N-Channel
|
| Power Dissipation-Max (Abs) |
90 W
|
300 W
|
| Pulsed Drain Current-Max (IDM) |
10.4 A
|
320 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
No
|
No
|
| Terminal Finish |
Matte Tin
|
Matte Tin (Sn) - Annealed
|
| Terminal Form |
Through-Hole
|
Through-Hole
|
| Terminal Position |
Single
|
Single
|
| Transistor Application |
Switching
|
Switching
|
| Transistor Element Material |
Silicon
|
Silicon
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
13 Weeks
|
|
|
|