TESDU12V vs CDDFN2-T12C feature comparison

TESDU12V Taiwan Semiconductor

Buy Now Datasheet

CDDFN2-T12C Bourns Inc

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD BOURNS INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor Bourns
Breakdown Voltage-Min 14 V 13 V
Breakdown Voltage-Nom 17 V
Clamping Voltage-Max 40 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-R2 R-PDSO-N2
JESD-609 Code e4 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 0.1 W
Reference Standard IEC-61000-4-2
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 1 µA
Reverse Test Voltage 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Gold (Au) TIN
Terminal Form WRAP AROUND NO LEAD
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Part Package Code DFN
Package Description DFN-2
Pin Count 2
Additional Feature LOW CAPACITANCE
Non-rep Peak Rev Power Dis-Max 25 W
Qualification Status Not Qualified

Compare TESDU12V with alternatives