TGL41-82 vs BZW06-171B0 feature comparison

TGL41-82 International Semiconductor Inc

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BZW06-171B0 Taiwan Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 90.2 V 210 V
Breakdown Voltage-Min 73.8 V 190 V
Breakdown Voltage-Nom 82 V 200 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 118 V 274 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PELF-N2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -40 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1.7 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 66.4 V 171 V
Reverse Current-Max 5 µA
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form NO LEAD WIRE
Terminal Position END AXIAL
Base Number Matches 7 2
Rohs Code Yes
Package Description O-PALF-W2
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-204AC
JESD-609 Code e3
Terminal Finish MATTE TIN

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Compare BZW06-171B0 with alternatives