TIP110
vs
JAN2N5660
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Additional Feature |
LEADFORM OPTIONS ARE AVAILABLE
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
2 A
|
2 A
|
| Collector-Base Capacitance-Max |
100 pF
|
|
| Collector-Emitter Voltage-Max |
60 V
|
200 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
500
|
40
|
| JEDEC-95 Code |
TO-220AB
|
TO-66
|
| JESD-30 Code |
R-PSFM-T3
|
O-MBFM-P2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
50 W
|
|
| Power Dissipation-Max (Abs) |
50 W
|
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
25 MHz
|
|
| VCEsat-Max |
2.5 V
|
|
| Base Number Matches |
44
|
8
|
| Reference Standard |
|
MIL-19500/454E
|
|
|
|
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