TN5325N3-G vs SI1031R-T1-GE3 feature comparison

TN5325N3-G Microchip Technology Inc

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SI1031R-T1-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer MICROCHIP TECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Package Description GREEN PACKAGE-3 HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Factory Lead Time 7 Weeks 6 Weeks
Samacsys Manufacturer Microchip Vishay
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V 20 V
Drain Current-Max (ID) 0.215 A 0.14 A
Drain-source On Resistance-Max 7 Ω 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 23 pF
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 0.74 W
Power Dissipation-Max (Abs) 0.74 W 0.28 W
Qualification Status Not Qualified Not Qualified
Reference Standard TS 16949
Surface Mount NO YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position BOTTOM DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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Compare SI1031R-T1-GE3 with alternatives