Part Details for TN5325N3-G by Microchip Technology Inc
Overview of TN5325N3-G by Microchip Technology Inc
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for TN5325N3-G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
91AH9260
|
Newark | Mosfet, N-Ch, 250V, 0.215A, To-92 Rohs Compliant: Yes |Microchip TN5325N3-G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 111 |
|
$0.5820 / $0.7800 | Buy Now |
|
DISTI #
TN5325N3-G-ND
|
DigiKey | MOSFET N-CH 250V 215MA TO92-3 Min Qty: 1 Lead time: 7 Weeks Container: Bag |
1260 In Stock |
|
$0.5600 / $0.7500 | Buy Now |
|
DISTI #
TN5325N3-G
|
Avnet Americas | Trans MOSFET N-CH 250V 0.215A 3-Pin TO-92 - Bag (Alt: TN5325N3-G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days Container: Bag | 0 |
|
$0.5600 / $0.7500 | Buy Now |
|
DISTI #
689-TN5325N3-G
|
Mouser Electronics | MOSFET 250V 7Ohm RoHS: Compliant | 6660 |
|
$0.4670 / $0.7500 | Buy Now |
|
DISTI #
TN5325N3-G
|
Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 250V, 7.0 Ohm, Projected EOL: 2034-11-18 RoHS: Compliant pbFree: Yes |
13000 Alternates Available |
|
$0.4300 / $0.7500 | Buy Now |
|
DISTI #
70453862
|
RS | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 250V, 7.0 Ohm3 TO-92 BAG | Microchip Technology Inc. TN5325N3-G RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
|
$0.6400 / $0.7500 | RFQ |
|
|
Future Electronics | 250V, 0.215 A, 7 ohms, TO-92 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1000 Container: Bag | 0Bag |
|
$0.4650 / $0.5050 | Buy Now |
|
|
Onlinecomponents.com | Trans MOSFET N-CH Si 250V 0.215A 3-Pin TO-92 Bag RoHS: Compliant |
1000 In Stock 13000 Factory Stock |
|
$0.3294 / $0.4096 | Buy Now |
|
DISTI #
66404334
|
Verical | Trans MOSFET N-CH Si 250V 0.215A 3-Pin TO-92 Bag RoHS: Compliant Min Qty: 150 Package Multiple: 50 Date Code: 2148 | Americas - 1000 |
|
$0.4936 / $0.5689 | Buy Now |
|
DISTI #
TN5325N3-G
|
Avnet Americas | Trans MOSFET N-CH 250V 0.215A 3-Pin TO-92 - Bag (Alt: TN5325N3-G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days Container: Bag | 0 |
|
$0.5600 / $0.7500 | Buy Now |
Part Details for TN5325N3-G
TN5325N3-G CAD Models
TN5325N3-G Part Data Attributes:
|
|
TN5325N3-G
Microchip Technology Inc
Buy Now
Datasheet
|
Compare Parts:
TN5325N3-G
Microchip Technology Inc
215mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | GREEN PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 11 Weeks | |
| Samacsys Manufacturer | Microchip | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 0.215 A | |
| Drain-source On Resistance-Max | 7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.74 W | |
| Power Dissipation-Max (Abs) | 0.74 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | TS 16949 | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TN5325N3-G
This table gives cross-reference parts and alternative options found for TN5325N3-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TN5325N3-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7002T7-7 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | TN5325N3-G vs 2N7002T7-7 |
| TP4859 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA | Allegro MicroSystems LLC | TN5325N3-G vs TP4859 |
| BST70A | TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal | NXP Semiconductors | TN5325N3-G vs BST70A |
| SI1031R-T1-GE3 | Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN | Vishay Intertechnologies | TN5325N3-G vs SI1031R-T1-GE3 |
| 2SK940 | TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92MOD, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | TN5325N3-G vs 2SK940 |
| VN10LPSTOB | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Diodes Incorporated | TN5325N3-G vs VN10LPSTOB |
| 2SK303-3-TA | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 | SANYO Electric Co Ltd | TN5325N3-G vs 2SK303-3-TA |
| ZVP3306AM1 | Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Diodes Incorporated | TN5325N3-G vs ZVP3306AM1 |
| PN4393-J22Z | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal | National Semiconductor Corporation | TN5325N3-G vs PN4393-J22Z |
| 2SK303-15-TB | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 | SANYO Electric Co Ltd | TN5325N3-G vs 2SK303-15-TB |