TS50P05GD2G vs KBPC5006W feature comparison

TS50P05GD2G Taiwan Semiconductor

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KBPC5006W America Semiconductor LLC

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD AMERICA SEMICONDUCTOR LLC
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PSFM-T4 S-MUFM-W4
JESD-609 Code e3
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 50 A 50 A
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR SQUARE
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; IEC-61000-4-2; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE WIRE
Terminal Position SINGLE UPPER
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 12
Reverse Current-Max 5 µA
Reverse Test Voltage 50 V

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