TZB39CB
vs
SMBJ11-GT3
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SEMICON COMPONENTS INC
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
O-XALF-W2
|
R-PDSO-C2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Breakdown Voltage-Max |
41 V
|
15.4 V
|
| Breakdown Voltage-Min |
37.1 V
|
12.2 V
|
| Breakdown Voltage-Nom |
39 V
|
|
| Case Connection |
ISOLATED
|
|
| Clamping Voltage-Max |
53.9 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-XALF-W2
|
R-PDSO-C2
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Polarity |
BIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reverse Current-Max |
2 µA
|
|
| Surface Mount |
NO
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
C BEND
|
| Terminal Position |
AXIAL
|
DUAL
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| JEDEC-95 Code |
|
DO-214AA
|
| Moisture Sensitivity Level |
|
1
|
| Reference Standard |
|
UL RECOGNIZED
|
| Rep Pk Reverse Voltage-Max |
|
11 V
|
|
|
|
Compare TZB39CB with alternatives
Compare SMBJ11-GT3 with alternatives