UM2106B
vs
UMX2106DR
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
LOW DISTORTION
|
LOW DISTORTION
|
Application |
ATTENUATOR; SWITCHING
|
ATTENUATOR; SWITCHING
|
Breakdown Voltage-Min |
600 V
|
600 V
|
Case Connection |
ISOLATED
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Capacitance-Max |
2.5 pF
|
2.5 pF
|
Diode Capacitance-Nom |
2.5 pF
|
1.9 pF
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Forward Resistance-Max |
2 Ω
|
2 Ω
|
Diode Res Test Current |
100 mA
|
100 mA
|
Diode Res Test Frequency |
2 MHz
|
2 MHz
|
Diode Type |
PIN DIODE
|
PIN DIODE
|
Frequency Band |
MEDIUM FREQUENCY TO HIGH FREQUENCY
|
MEDIUM FREQUENCY TO HIGH FREQUENCY
|
JESD-30 Code |
O-XALF-W2
|
O-CRPM-F2
|
JESD-609 Code |
e0
|
|
Minority Carrier Lifetime-Nom |
25 µs
|
25 µs
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
POST/STUD MOUNT
|
Power Dissipation-Max |
2.5 W
|
18.75 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reverse Test Voltage |
100 V
|
100 V
|
Surface Mount |
NO
|
NO
|
Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
POSITIVE-INTRINSIC-NEGATIVE
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
FLAT
|
Terminal Position |
AXIAL
|
RADIAL
|
Base Number Matches |
2
|
2
|
Package Description |
|
ROHS COMPLIANT PACKAGE-2
|
Pin Count |
|
2
|
|
|
|