VN2460N3-G vs TN2640K4-G feature comparison

VN2460N3-G Microchip Technology Inc

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TN2640K4-G Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description TO-92, 3 PIN DPAK-3/2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Factory Lead Time 7 Weeks 8 Weeks
Samacsys Manufacturer Microchip Microchip
Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 400 V
Drain Current-Max (ID) 0.16 A 0.5 A
Drain-source On Resistance-Max 25 Ω 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF 15 pF
JEDEC-95 Code TO-92 TO-252
JESD-30 Code O-PBCY-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W 2.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position BOTTOM SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 1
Case Connection DRAIN
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 3 A
Turn-off Time-Max (toff) 52 ns
Turn-on Time-Max (ton) 35 ns

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