W29N08GVBJAD
vs
W29N08GVSIAF
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
WINBOND ELECTRONICS CORP
|
WINBOND ELECTRONICS CORP
|
| Package Description |
,
|
TSOP1,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Memory IC Type |
FLASH
|
FLASH
|
| Programming Voltage |
3.3 V
|
3.3 V
|
| Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
Winbond
|
| JESD-30 Code |
|
R-PDSO-G48
|
| Length |
|
18.4 mm
|
| Memory Density |
|
8589934592 bit
|
| Memory Width |
|
8
|
| Number of Functions |
|
1
|
| Number of Terminals |
|
48
|
| Number of Words |
|
1073741824 words
|
| Number of Words Code |
|
1000000000
|
| Operating Mode |
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
|
1GX8
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Code |
|
TSOP1
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE, THIN PROFILE
|
| Parallel/Serial |
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Seated Height-Max |
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
|
3.3 V
|
| Surface Mount |
|
YES
|
| Technology |
|
CMOS
|
| Temperature Grade |
|
INDUSTRIAL
|
| Terminal Form |
|
GULL WING
|
| Terminal Pitch |
|
0.5 mm
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Width |
|
12 mm
|
|
|
|
Compare W29N08GVBJAD with alternatives
Compare W29N08GVSIAF with alternatives