W7NCF01GH21CS7CG
vs
W7NCF01GH10CS8DG
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Part Package Code |
DIE
|
DIE
|
| Package Description |
CARD
|
DIE,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
150 ns
|
150 ns
|
| Additional Feature |
5 V OPERATION IS ALSO POSSIBLE
|
5 V OPERATION IS ALSO POSSIBLE
|
| JESD-30 Code |
R-XUUC-N
|
R-XUUC-N
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH CARD
|
FLASH CARD
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Words |
67108864 words
|
67108864 words
|
| Number of Words Code |
64000000
|
64000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
64MX16
|
64MX16
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Code |
DIE
|
DIE
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
UNCASED CHIP
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Programming Voltage |
3.3 V
|
3.3 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare W7NCF01GH21CS7CG with alternatives
Compare W7NCF01GH10CS8DG with alternatives