WV3HG64M64EEU665D6SG
vs
EBE52UC8AAFA-4C-E
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
ELPIDA MEMORY INC
|
| Part Package Code |
DIMM
|
DIMM
|
| Package Description |
DIMM,
|
DIMM,
|
| Pin Count |
240
|
240
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
8542.32.00.36
|
| Access Mode |
SINGLE BANK PAGE BURST
|
DUAL BANK PAGE BURST
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-XDMA-N240
|
R-XDMA-N240
|
| JESD-609 Code |
e4
|
|
| Memory Density |
4294967296 bit
|
4294967296 bit
|
| Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
240
|
240
|
| Number of Words |
67108864 words
|
67108864 words
|
| Number of Words Code |
64000000
|
64000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
|
|
| Organization |
64MX64
|
64MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Code |
DIMM
|
DIMM
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Finish |
GOLD
|
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
1
|
| Access Time-Max |
|
0.6 ns
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare WV3HG64M64EEU665D6SG with alternatives
Compare EBE52UC8AAFA-4C-E with alternatives