Part Details for 0912GN-500LV by Microsemi Corporation
Overview of 0912GN-500LV by Microsemi Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Industrial Automation
Price & Stock for 0912GN-500LV
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
0912GN-500LV
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for 0912GN-500LV
0912GN-500LV CAD Models
0912GN-500LV Part Data Attributes:
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0912GN-500LV
Microsemi Corporation
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Datasheet
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0912GN-500LV
Microsemi Corporation
RF Power Field-Effect Transistor,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 150 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 550 W | |
| Power Gain-Min (Gp) | 16 dB | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | GALLIUM NITRIDE |