Parametric results for: 0912GN-500LV under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

SOURCE 2

2 hits Apply

Configuration (2)

SINGLE 1 Single 1

2 hits Apply

DS Breakdown Voltage-Min (1)

150 V 2

2 hits Apply

HIGH ELECTRON MOBILITY 1 METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

Highest Frequency Band (1)

L BAND 2

2 hits Apply

R-CDFM-F2 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

DEPLETION MODE 1 ENHANCEMENT MODE 1

2 hits Apply

200.0 °C 1 250.0 °C 1

Min (°C) - Max (°C)

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

550 W 1

2 hits Apply

Power Gain-Min (Gp) (1)

16.0 dB 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply