Part Details for 0912GN-500LV by Microchip Technology Inc
Overview of 0912GN-500LV by Microchip Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Industrial Automation
Price & Stock for 0912GN-500LV
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
150-0912GN-500LV-ND
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DigiKey | RF MOSFET HEMT 50V 55-KR Lead time: 52 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now |
Part Details for 0912GN-500LV
0912GN-500LV CAD Models
0912GN-500LV Part Data Attributes
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0912GN-500LV
Microchip Technology Inc
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Datasheet
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0912GN-500LV
Microchip Technology Inc
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 150 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 250 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 16 dB | |
Surface Mount | NO | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM NITRIDE |