Datasheets
10N60L-TF1-T by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN

Part Details for 10N60L-TF1-T by Unisonic Technologies Co Ltd

Overview of 10N60L-TF1-T by Unisonic Technologies Co Ltd

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for 10N60L-TF1-T

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10N60L-TF1-T Part Data Attributes

10N60L-TF1-T Unisonic Technologies Co Ltd
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10N60L-TF1-T Unisonic Technologies Co Ltd Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Part Package Code TO-220AB
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 700 mJ
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 24 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 38 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 465 ns
Turn-on Time-Max (ton) 205 ns

Alternate Parts for 10N60L-TF1-T

This table gives cross-reference parts and alternative options found for 10N60L-TF1-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 10N60L-TF1-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
10N60G-TF1-T Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN Unisonic Technologies Co Ltd 10N60L-TF1-T vs 10N60G-TF1-T
STH10NK60ZFI 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT218, 3 PIN STMicroelectronics 10N60L-TF1-T vs STH10NK60ZFI
STF12NK65Z Power MOSFETs, N-channel 650 V, 0.57 Ohm, 10 A, TO-220FP STMicroelectronics 10N60L-TF1-T vs STF12NK65Z
10N60G-TF3-T Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Unisonic Technologies Co Ltd 10N60L-TF1-T vs 10N60G-TF3-T
TK10A60E Nch 500V<VDSS≤700V Toshiba America Electronic Components 10N60L-TF1-T vs TK10A60E
TK11A65D TRANSISTOR 11 A, 650 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, 2-10U1S, SC-67, TO-220SIS, 3 PIN, FET General Purpose Power Toshiba America Electronic Components 10N60L-TF1-T vs TK11A65D
10N60L-TF3-T Power Field-Effect Transistor, 10A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Unisonic Technologies Co Ltd 10N60L-TF1-T vs 10N60L-TF3-T
AP3989I TRANSISTOR 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp 10N60L-TF1-T vs AP3989I
STH10NC60FI 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STMicroelectronics 10N60L-TF1-T vs STH10NC60FI

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