Datasheets
1N5451A by:

39pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2

Part Details for 1N5451A by Aeroflex Inc

Overview of 1N5451A by Aeroflex Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for 1N5451A

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1N5451A Part Data Attributes

1N5451A Aeroflex Inc
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1N5451A Aeroflex Inc 39pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer KNOX SEMICONDUCTORS INC
Part Package Code DO-7
Package Description O-LALF-W2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 30 V
Case Connection ISOLATED
Configuration SINGLE
Diode Cap Tolerance 10%
Diode Capacitance Ratio-Min 2.6
Diode Capacitance-Nom 39 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
JEDEC-95 Code DO-7
JESD-30 Code O-LALF-W2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 0.4 W
Qualification Status Not Qualified
Quality Factor-Min 300
Rep Pk Reverse Voltage-Max 30 V
Reverse Current-Max 2e-8 µA
Reverse Test Voltage 25 V
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL
Variable Capacitance Diode Classification ABRUPT

Alternate Parts for 1N5451A

This table gives cross-reference parts and alternative options found for 1N5451A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5451A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1N5451A Variable Capacitance Diode, 39pF C(T), 30V, Silicon, DO-7 International Semiconductor Inc 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, 39pF C(T), 30V, Silicon, Abrupt, DO-7 Microsemi Corporation 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt Msi Electronics Inc 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt, DO-7, API Technologies Corp 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, 39pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 MACOM 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt, DO-7 Lockheed Martin Microwave 1N5451A vs 1N5451A
Part Number Description Manufacturer Compare
1N5451A Variable Capacitance Diode, 39pF C(T), 30V, Silicon, DO-7 International Semiconductor Inc 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, 39pF C(T), 30V, Silicon, Abrupt, DO-7 Microsemi Corporation 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt Msi Electronics Inc 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt, DO-7, API Technologies Corp 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 30V, Silicon, Abrupt, DO-7 Lockheed Martin Microwave 1N5451A vs 1N5451A
1N5451A Variable Capacitance Diode, 39pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 MACOM 1N5451A vs 1N5451A

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